Development of Extreme Ultraviolet Photoresists

被引：7
作者：
Guo Xudong [1 ,3 ]
Yang Guoqiang [1 ,3 ]
Li Yi [2 ,3 ]
机构：
[1] Chinese Acad Sci, Key Lab Photochem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100039, Peoples R China
来源：
LASER & OPTOELECTRONICS PROGRESS | 2022年 / 59卷 / 09期
关键词：
material; extreme ultraviolet lithography; extreme ultraviolet photoresist; lithography; MOLECULAR GLASS RESISTS; CHEMICALLY AMPLIFIED RESIST; HIGH-RESOLUTION; NANOPARTICLE PHOTORESISTS; HIGH-SENSITIVITY; E-BEAM; 50; NM; EUV; PERFORMANCE; DERIVATIVES;
D O I：
10.3788/LOP202259.0922004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
As Extreme Ultraviolet (EUV) lithography has become the most advanced lithography technology applied in the semiconductor manufacturing industry, corresponding EUV photoresists have also developed significantly in recent years. Herein, the development of polymeric, single-molecule-resin, and organic-inorganic hybrid EUV photoresists has been reviewed, considering the new problems and challenges faced by EUV lithography. It should benefit the researchers in the EUV lithography and photoresist.
引用
收藏
页数：28
相关论文
共 137 条
[1]   Evaluation of Novel Resist Materials for EUV Lithography [J].
Aratani, Ichihiro ;
Matsunaga, Shuji ;
Kajiyashiki, Tsuyoshi ;
Watanabe, Takeo ;
Kinoshita, Hiroo .
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVI, 2009, 7273
[2]   High refractive index and high transparency HfO2 nanocomposites for next generation lithography [J].
Bae, Woo Jin ;
Trikeriotis, Markos ;
Sha, Jing ;
Schwartz, Evan L. ;
Rodriguez, Robert ;
Zimmerman, Paul ;
Giannelis, Emmanuel P. ;
Ober, Christopher K. .
JOURNAL OF MATERIALS CHEMISTRY, 2010, 20 (25) :5186-5189
[3]  
Banine, 2013, P INT WORKSHOP EUV S
[4]   REDUCTION IMAGING AT 14 NM USING MULTILAYER-COATED OPTICS - PRINTING OF FEATURES SMALLER THAN 0.1-MU-M [J].
BJORKHOLM, JE ;
BOKOR, J ;
EICHNER, L ;
FREEMAN, RR ;
GREGUS, J ;
JEWELL, TE ;
MANSFIELD, WM ;
MACDOWELL, AA ;
RAAB, EL ;
SILFVAST, WT ;
SZETO, LH ;
TENNANT, DM ;
WASKIEWICZ, WK ;
WHITE, DL ;
WINDT, DL ;
WOOD, OR ;
BRUNING, JH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1509-1513
[5]   Polycarbonate Based Non-chemically Amplified Photoresists for Extreme Ultraviolet Lithography [J].
Blakey, Idriss ;
Yu, Anguang ;
Blinco, James ;
Jack, Kevin S. ;
Liu, Heping ;
Leeson, Michael ;
Yeuh, Wang ;
Younkin, Todd ;
Whittaker, Andrew K. .
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY, 2010, 7636
[6]   Shot noise, LER and quantum efficiency of EUV photoresists [J].
Brainard, RL ;
Trefonas, P ;
Lammers, JH ;
Cutler, CA ;
Mackevich, JF ;
Trefonas, A ;
Robertson, SA .
EMERGING LITHOGRAPHIC TECHNOLOGIES VIII, 2004, 5374 :74-85
[7]   Resists for next generation lithography [J].
Brainard, RL ;
Barclay, GG ;
Anderson, EH ;
Ocola, LE .
MICROELECTRONIC ENGINEERING, 2002, 61-2 :707-715
[8]   Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation [J].
Brainard, RL ;
Henderson, C ;
Cobb, J ;
Rao, V ;
Mackevich, JF ;
Okoroanyanwu, U ;
Gunn, S ;
Chambers, J ;
Connolly, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :3384-3389
[9]   Molecular glass resists for next generation lithography [J].
Bratton, Daniel ;
Ayothi, Ramakrishnan ;
Felix, Nelson ;
Cao, Heidi ;
Deng, Hai ;
Ober, Christopher K. .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 :U567-U575
[10]   Multi-component EUV multilayer mirrors [J].
Braun, S ;
Foltyn, T ;
van Loyen, L ;
Moss, M ;
Leson, A .
EMERGING LITHOGRAPHIC TECHNOLOGIES VII, PTS 1 AND 2, 2003, 5037 :274-285
12345678910