AlGaN/GaN MIS-HEMT With AlN Interface Protection Layer and Trench Termination Structure

被引：22

作者：

Yang, Chao ^{[1
]}

Luo, Xiaorong ^{[1
]}

Zhang, Anbang ^{[1
]}

Deng, Siyu ^{[1
]}

Ouyang, Dongfa ^{[1
]}

Peng, Fu ^{[1
]}

Wei, Jie ^{[1
]}

Zhang, Bo ^{[1
]}

Li, Zhaoji ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Breakdown voltage (BV); interface protection layer (IPL); low-pressure chemical vapor deposition (LPCVD) Si3N4; metal-insulator-semiconductor (MIS) high-electron-mobility transistor (HEMT); pulsed laser deposited (PLD) AlN; trench termination; BREAKDOWN VOLTAGE; PASSIVATION;

D O I：

10.1109/TED.2018.2868104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, an AlGaN/GaN metal-insulator- semiconductor high-electron-mobility transistor (MISHEMT) with pulsed laser deposited AlN interface protection layer (IPL) and trench termination (T-2) structure is experimentally and theoretically investigated. The AlN IPL could effectively improve the interface quality and reduce the interface trap density, which is verified by frequency-dependent C-V measurement and conductance method. The T-2 structure extends the depletion region and increases the average electric field (E-field) strength between the gate and drain, achieving an enhanced breakdown voltage (BV). The measured BV and saturated output current density are 412 V and 505 mA/mm for the device at L-G/L-GS/L-GD/W-G = 1.5/1.5/5/10 mu m, respectively. Compared with the MIS-HEMT without T-2 structure, the proposed device increases the BV by 63%.

引用

页码：5203 / 5207

页数：5

共 23 条

[1] Effect of interface and bulk traps on the C-V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure [J].