Preparation of boron-doped ZnO thin films by photo-atomic layer deposition

被引：107
作者：
Yamamoto, Y
Saito, K
Takahashi, K
Konagai, M
机构：
[1] Teikyo Univ Sci & Technol, Dept Elect & Informat Sci, Uenohara, Yamanashi 4090193, Japan
[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 65卷 / 1-4期
关键词：
ZnO; photo-atomic layer deposition; transparent conductive oxide;
D O I：
10.1016/S0927-0248(00)00086-6
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Low-resistivity and high-stability ZnO films were grown by photo-atomic layer deposition (photo-ALD) technique using boron as an n-type dopant. The effect of the UV-irradiation was quantitatively evaluated by controlling the intensity of the incident light. The growth mechanism of ZnO films under UV-irradiation was investigated by varying the UV-irradiation period. In addition to the UV-irradiation, n-type doping using B2H6 was carried out. By optimizing the introduction cycle of B2H6, the lowest resistivity of 6.9 x 10(-4) Ohm cm was obtained. Furthermore, ZnO films grown by photo-ALD exhibit excellent stability in the electrical properties under air exposure. (C) 2001 Elsevier Science B.V. All rights reserved.
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页码：125 / 132
页数：8
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