Effects of atomic hydrogen on the indium incorporation in InGaN grown by RF-molecular beam epitaxy

被引：5

作者：

Okamoto, Y ^{[1
]}

Takahashi, K ^{[1
]}

Nakamura, H ^{[1
]}

Okada, Y ^{[1
]}

Kawabe, M ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 4B期

关键词：

InGaN; molecular beam epitaxy (MBE); atomic hydrogen; In-incorporation; III-V nitride;

D O I：

10.1143/JJAP.39.L343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effect of atomic hydrogen(H) irradiation on the In incorporation in InGaN films grown by RF-molecular beam epitaxy (MBE). The molecular hydrogen (H-2) and atomic H irradiation in InGaN growth by RF-MBE were found to enhance the In incorporation. The atomic H irradiation in InGaN growth increased the In incorporation with increasing H2 dow rate. The In incorporation for samples grown with H was higher than without H2 in the temperature range of 640 degrees C to 700 degrees C. These results may represent a new and interesting avenue of investigation into the understanding of growth of III-nitride films. We consider that the mechanisms responsible for the modification of In incorporation by atomic H irradiation are mainly due to an increase of the nitrogen species and partly to suppression of 3-dimensional(3-D) growth thereby enhancing a 2-D growth.

引用

页码：L343 / L346

页数：4

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