Ab initio supercell calculations on aluminum-related defects in SiC

被引：24
作者：
Gali, A.
Hornos, T.
Son, N. T.
Janzen, E.
Choyke, W. J.
机构：
[1] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary
[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[3] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA
来源：
PHYSICAL REVIEW B | 2007年 / 75卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.75.045211
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ab initio supercell calculations of the binding energies predict complex formation between aluminum and carbon interstitials in SiC. In high-energy implanted SiC aluminum acceptor can form very stable complexes with two carbon interstitials. We also show that carbon vacancy can be attached to shallow aluminum acceptor. All of these defects produce deep levels in the band gap. The possible relation of these defects to the recently found aluminum-related deep-level transient spectroscopy centers is discussed.
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页数：8
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