Assessment of a Silicon Quantum Dot Spin Qubit Environment via Noise Spectroscopy

被引：102

作者：

Chan, K. W. ^{[1
]}

Huang, W. ^{[1
]}

Yang, C. H. ^{[1
]}

Hwang, J. C. C. ^{[1
]}

Hensen, B. ^{[1
]}

Tanttu, T. ^{[1
]}

Hudson, F. E. ^{[1
]}

Itoh, K. M. ^{[2
]}

Laucht, A. ^{[1
]}

Morello, A. ^{[1
]}

Dzurak, A. S. ^{[1
]}

机构：

[1] Univ New South Wales, Sch Elect Engn & Telecommun, Ctr Quantum Computat & Commun Technol, Sydney, NSW 2052, Australia

[2] Keio Univ, Sch Fundamental Sci & Technol, Kohoku Ku, 3-14-1 Hiyoshi, Yokohama, Kanagawa 2238522, Japan

来源：

PHYSICAL REVIEW APPLIED | 2018年 / 10卷 / 04期

基金：

日本学术振兴会; 澳大利亚研究理事会;

关键词：

ELECTRON-SPIN; FIDELITY; GATE;

D O I：

10.1103/PhysRevApplied.10.044017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Preserving coherence long enough to perform meaningful calculations is one of the major challenges on the pathway to large-scale quantum-computer implementations. Noise coupled in from the environment is the main factor contributing to decoherence but can be mitigated via engineering design and control solutions. However, this is possible only after acquisition of a thorough understanding of the dominant noise sources and their spectrum. In the work reported here, we use a silicon quantum dot spin qubit as a metrological device to study the noise environment experienced by the qubit. We compare the sensitivity of this qubit to electrical noise with that of an implanted silicon-donor qubit in the same environment and measurement setup. Our results show that, as expected, a quantum dot spin qubit is more sensitive to electrical noise than a donor spin qubit due to the larger Stark shift, and the noise-spectroscopy data show pronounced charge-noise contributions at intermediate frequencies (2-20 kHz).

引用

页数：7

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