Oxide formation on the CdTe(111) A (1 X 1) surface

被引:10
作者
Kowalski, BJ
Orlowski, BA
Ghijsen, J
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Fac Univ Notre Dame Paix, LISE, B-5000 Namur, Belgium
关键词
cadmium telluride; oxygen; photoelectron spectroscopy; semiconductors;
D O I
10.1016/S0169-4332(00)00423-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A CdTe(111)A (1 X 1) surface, prepared in situ by argon ion bombardment and annealing (at 250 degrees C), was oxidized at the pressure of 1 x 10(-5)-5 X 10(-5) Torr of molecular oxygen excited by the hot filament of the ion gauge. The surface atomic structure was studied by low-energy electron diffraction (LEED). The surface chemical composition and the oxidation process were monitored by recording the energy position and shape of Te 3d, Cd 3d, O Is and C 1s core level peaks by X-ray photoemission spectroscopy. The excess of Te on the clean CdTe(111)A (1 x 1) surface was detected. Then, the increase of oxygen bound on the surface was observed as a function of the gas exposure. Symptoms of selective oxidation of Te atoms on the surface and in subsurface region were revealed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:237 / 241
页数:5
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