3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaOX/Pt-ReRAM Devices

被引：59

作者：

Kim, W. ^{[1
]}

Menzel, S. ^{[1
]}

Wouters, D. J. ^{[2
]}

Waser, R. ^{[1
,2
]}

Rana, V. ^{[1
]}

机构：

[1] Forschungszentrum Julich GmbH Ctr, Peter Grunberg Inst, D-52425 Julich, Germany

[2] Rhein Westfal TH Aachen, Inst Mat Elect Engn & Informat Technol 2, D-52074 Aachen, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 05期

关键词：

Multilevel cell; ohmic electrode; resistive RAM; deep-reset; reset stop voltage; tantalum oxide;

D O I：

10.1109/LED.2016.2542879

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of two different ohmic electrodes (W and Ta) on the resistive switching characteristics of TaOX-based resistive random access memory (ReRAM) devices has been studied. Consistently, higher resistance OFF states have been observed with the W-ohmic electrode under the same operational conditions for all reset stop voltages (Vreset-stop) during both the dc and ac measurements. The deeper reset for samples with W-electrode is attributed to the less negative Gibbs-free energy of W-oxide compared with Ta-oxide, resulting in easier re-oxidation of the filament through oxygen exchange with the W-electrode. The higher R-OFF/R-ON(>10(3)) with the W-electrode enables 3-bit multilevel cell operation in the Pt/W/TaOX/Pt ReRAM device. An excellent retention for these eight states is demonstrated at 125 degrees C for 10(4) s. Furthermore, the TaOX ReRAM device with both the electrodes shows high endurance up to 10(6) cycles based on two states.

引用

页码：564 / 567

页数：4

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