3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaOX/Pt-ReRAM Devices

被引:59
作者
Kim, W. [1 ]
Menzel, S. [1 ]
Wouters, D. J. [2 ]
Waser, R. [1 ,2 ]
Rana, V. [1 ]
机构
[1] Forschungszentrum Julich GmbH Ctr, Peter Grunberg Inst, D-52425 Julich, Germany
[2] Rhein Westfal TH Aachen, Inst Mat Elect Engn & Informat Technol 2, D-52074 Aachen, Germany
关键词
Multilevel cell; ohmic electrode; resistive RAM; deep-reset; reset stop voltage; tantalum oxide;
D O I
10.1109/LED.2016.2542879
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influence of two different ohmic electrodes (W and Ta) on the resistive switching characteristics of TaOX-based resistive random access memory (ReRAM) devices has been studied. Consistently, higher resistance OFF states have been observed with the W-ohmic electrode under the same operational conditions for all reset stop voltages (Vreset-stop) during both the dc and ac measurements. The deeper reset for samples with W-electrode is attributed to the less negative Gibbs-free energy of W-oxide compared with Ta-oxide, resulting in easier re-oxidation of the filament through oxygen exchange with the W-electrode. The higher R-OFF/R-ON(>10(3)) with the W-electrode enables 3-bit multilevel cell operation in the Pt/W/TaOX/Pt ReRAM device. An excellent retention for these eight states is demonstrated at 125 degrees C for 10(4) s. Furthermore, the TaOX ReRAM device with both the electrodes shows high endurance up to 10(6) cycles based on two states.
引用
收藏
页码:564 / 567
页数:4
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