Stark shift of interband transitions in AIN/GaN superlattices

被引：7
|
作者：
Buchheim, C.
Goldhahn, R.
Winzer, A. T.
Gobsch, G.
Rossow, U.
Fuhrmann, D.
Hangleiter, A.
Furtmayr, F.
Eickhoff, M.
机构：
[1] Tech Univ Ilmenau, Inst Phys, D-98684 Ilmenau, Germany
[2] Tech Univ Carolo Wilhelmina Braunschweig, Inst Appl Phys, D-38106 Braunschweig, Germany
[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Munich, Germany
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 24期
关键词：
D O I：
10.1063/1.2748313
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The e1h1, e1h2, and e1h3 transitions of AlN/GaN superlattices with different well widths were detected by electroreflectance measurements in dependence on the externally applied voltage. The quantum confined Stark effect of several tens of meV is observed, whose energy shift increases for larger well widths. The experimental results agree with quantum mechanical calculations at the Brillouin zone center. For well widths of 2.3 and 1.4 nm an intrinsic electric field strength in the wells of 5.04 and 6.07 MV/cm is calculated. (c) 2007 American Institute of Physics.
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页数：3
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