Homogeneous two-dimensional nucleation of guest-free silicon clathrates

被引:1
|
作者
Lu, Yong Jun [1 ,2 ]
机构
[1] Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
基金
中国国家自然科学基金;
关键词
two-dimensional nucleation; Si clathrates; molecular dynamics simulations; DENSITY FRAMEWORK FORM; CRYSTALLINE SILICON; MOLECULAR-DYNAMICS; COMPUTER-SIMULATION; SUPERCOOLED SILICON; HYDRATE NUCLEATION; PHASE-TRANSITION; WATER CLUSTERS; HIGH-PRESSURE; LIQUID WATER;
D O I
10.1080/14786435.2014.998308
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The difficulty in synthesizing guest-free semiconductor clathrates complicates the process of determining how these cage-like structures form. This work studies the microscopic mechanism of the nucleation of guest-free Si-136 clathrate using molecular dynamics simulations with the Stillinger-Weber potential. The homogeneous nucleation of Si-136, which is realized in a narrow negative pressure range before liquid cavitation, exhibits the characteristic feature of the two-dimensional (2D) mode. The critical nucleus is composed of one to two five-membered rings, and the nucleation barrier is close to 1k(B)T. According to a thermodynamic model based on atomistic nucleation theory, the effective binding energy associated with the formation of 2D critical nuclei is significantly low, which is responsible for the low nucleation barrier of Si-136 clathrate. In the post-nucleation period, the critical nucleus preferentially grows into a dodecahedron, and the latter continuously grows with sharing face along < 110 >.
引用
收藏
页码:242 / 258
页数:17
相关论文
共 33 条
  • [1] Guest-free monolayer clathrate and its coexistence with two-dimensional high-density ice
    Bai, Jaeil
    Angell, C. Austen
    Zeng, Xiao Cheng
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2010, 107 (13) : 5718 - 5722
  • [2] Thin film of guest-free type-II silicon clathrate on Si(111) wafer
    Kume, Tetsuji
    Ohashi, Fumitaka
    Sakai, Kentaro
    Fukuyama, Atsuhiko
    Imai, Motoharu
    Udono, Haruhiko
    Ban, Takayuki
    Habuchi, Hitoe
    Suzuki, Hidetoshi
    Ikari, Tetsuo
    Sasaki, Shigeo
    Nonomura, Shuichi
    THIN SOLID FILMS, 2016, 609 : 30 - 34
  • [3] Quantum effects in two-dimensional silicon carbide
    Herrero, Carlos P.
    Ramirez, Rafael
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2022, 171
  • [4] A two-dimensional molecular dynamics simulation of liquid-vapor nucleation
    Wang, JZ
    Chen, M
    Guo, ZY
    CHINESE SCIENCE BULLETIN, 2003, 48 (07): : 623 - 626
  • [5] Atomistic mechanisms of phase nucleation and propagation in a model two-dimensional system
    Shuang, Fei
    Xiao, Penghao
    Xiong, Liming
    Gao, Wei
    PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2022, 478 (2268):
  • [6] A two-dimensional molecular dynamics simulation of liquid-vapor nucleation
    WANG Jinzhao
    Chinese Science Bulletin, 2003, (07) : 623 - 626
  • [7] Two-dimensional nucleation at stacking fault during InP microchannel epitaxy
    Naritsuka, S
    Yan, Z
    Nishinaga, T
    JOURNAL OF CRYSTAL GROWTH, 1999, 198 : 1082 - 1086
  • [8] Bilateral substrate effect on the thermal conductivity of two-dimensional silicon
    Zhang, Xiaoliang
    Bao, Hua
    Hu, Ming
    NANOSCALE, 2015, 7 (14) : 6014 - 6022
  • [9] Tensile strength and fracture mechanics of two-dimensional nanocrystalline silicon carbide
    Chowdhury, Emdadul Haque
    Rahman, Md. Habibur
    Hong, Sungwook
    COMPUTATIONAL MATERIALS SCIENCE, 2021, 197
  • [10] Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth
    Sitnikov, S. V.
    Kosolobov, S. S.
    Latyshev, A. V.
    SEMICONDUCTORS, 2017, 51 (02) : 203 - 206