Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

被引：36

作者：

Chen, Fan W. ^{[1
]}

Ilatikhameneh, Hesameddin ^{[2
]}

Klimeck, Gerhard ^{[2
]}

Chen, Zhihong ^{[3
]}

Rahman, Rajib ^{[2
]}

机构：

[1] Purdue Univ, Dept Phys & Astron, Network Computat Nanotechnol, W Lafayette, IN 47907 USA

[2] Purdue Univ, Sch Elect & Comp Engn, Network Computat Nanotechnol, W Lafayette, IN 47907 USA

[3] Purdue Univ, Sch Elect & Comp Engn, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2016年 / 4卷 / 03期

基金：

美国国家科学基金会;

关键词：

Bilayer graphene (BLG); tunnel field-effect transistor (TFET); electrostatically doping; non-equilibrium Green's function (NEGF);

D O I：

10.1109/JEDS.2016.2539919

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by vertical electric fields in the source, channel, and drain regions without any chemical doping. The performance of the transistor is evaluated by self-consistent quantum transport simulations. This device has several advantages: 1) ultra-low power (V-DD=0.1V); 2) high performance (I-ON/I-OFF>10(4)); 3) steep subthreshold swing (SS<10mv/dec); and 4) electrically configurable between N-TFET and P-TFET post fabrication. The operation principle of the BED-TFET and its performance sensitivity to the device design parameters are presented.

引用

页码：124 / 128

页数：5

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