Si based Tunneling Field Effect Transistors and Inverters

被引:0
|
作者
Mantl, Siegfried [1 ]
Knoll, Lars [1 ]
Richter, Simon [1 ]
Schmidt, Matthias [1 ]
Wirths, Stephan [1 ]
Nichau, Alexander [1 ]
Schaefer, Anna [1 ]
Blaeser, Sebastian [1 ]
Trellenkamp, Stefan [1 ]
Hartmann, Jean-Michael [2 ]
Bourdelle, Konstantin K. [3 ]
Buca, Dan [1 ]
Zhao, Qing-Tai [1 ]
机构
[1] Forschungszentrum Julich, JARA FIT, PGI IT 9, D-52425 Julich, Germany
[2] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
[3] SOITEC, Parc Technol Fontaines, F-38190 Bernin, France
来源
2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2013年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:193 / +
页数:2
相关论文
共 50 条
  • [41] Fundamental Limit to Scaling Si Field-Effect Transistors Due to Source-to-Drain Direct Tunneling
    Markov, Stanislav
    Kwok, Yanho
    Li, Jun
    Zhou, Weijun
    Zhou, Yi
    Chen, Guanhua
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (03) : 1167 - 1173
  • [42] Formation of polycrystalline-Si thin-film transistors with tunneling field-effect-transistor structure
    Juang, Miin-Horng
    Hu, P. -S.
    Jang, S. L.
    THIN SOLID FILMS, 2010, 518 (14) : 3978 - 3981
  • [43] Complementary Black Phosphorus Tunneling Field-Effect Transistors
    Wu, Peng
    Ameen, Tarek
    Zhang, Huairuo
    Bendersky, Leonid A.
    Ilatikhameneh, Hesameddin
    Klimeck, Gerhard
    Rahman, Rajib
    Davydov, Albert V.
    Appenzeller, Joerg
    ACS NANO, 2019, 13 (01) : 377 - 385
  • [44] A SPICE model of silicon tunneling field-effect transistors
    Woo, Sola
    Kim, Minsuk
    Kim, Sangsig
    MICROELECTRONIC ENGINEERING, 2018, 191 : 66 - 71
  • [45] Analysis of the subthreshold characteristics of vertical tunneling field effect transistors
    韩忠方
    茹国平
    阮刚
    Journal of Semiconductors, 2013, (01) : 28 - 34
  • [46] Electrostatic Design of Vertical Tunneling Field-Effect Transistors
    Teherani, James T.
    Yu, Tao
    Antoniadis, Dimitri A.
    Hoyt, Judy L.
    2013 THIRD BERKELEY SYMPOSIUM ON ENERGY EFFICIENT ELECTRONIC SYSTEMS (E3S), 2013,
  • [47] Effect of spacer dielectrics on performance characteristics of Ge-based tunneling field-effect transistors
    Yoon, Young Jun
    Seo, Jae Hwa
    Kang, Hee-Sung
    Kim, Young-Jo
    Bae, Jin-Hyuk
    Cho, Eou-Sik
    Lee, Jung-Hee
    Cho, Seongjae
    Kang, In Man
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (06)
  • [48] Analog/RF performance of L- and U-shaped channel tunneling field-effect transistors and their application as digital inverters
    Wang, Qianqiong
    Wang, Shulong
    Liu, Hongxia
    Li, Wei
    Chen, Shupeng
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (06)
  • [49] Electric Double Layer Gate Field-Effect Transistors Based on Si
    Yanase, Takashi
    Shimada, Toshihiro
    Hasegawa, Tetsuya
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [50] High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors
    Tosun, Mahmut
    Chuang, Steven
    Fang, Hui
    Sachid, Angada B.
    Hettick, Mark
    Lin, Yongjing
    Zeng, Yuping
    Javey, Ali
    ACS NANO, 2014, 8 (05) : 4948 - 4953