Si based Tunneling Field Effect Transistors and Inverters

被引：0

作者：

Mantl, Siegfried ^{[1
]}

Knoll, Lars ^{[1
]}

Richter, Simon ^{[1
]}

Schmidt, Matthias ^{[1
]}

Wirths, Stephan ^{[1
]}

Nichau, Alexander ^{[1
]}

Schaefer, Anna ^{[1
]}

Blaeser, Sebastian ^{[1
]}

Trellenkamp, Stefan ^{[1
]}

Hartmann, Jean-Michael ^{[2
]}

Bourdelle, Konstantin K. ^{[3
]}

Buca, Dan ^{[1
]}

Zhao, Qing-Tai ^{[1
]}

机构：

[1] Forschungszentrum Julich, JARA FIT, PGI IT 9, D-52425 Julich, Germany

[2] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

[3] SOITEC, Parc Technol Fontaines, F-38190 Bernin, France

来源：

2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：193 / +

页数：2

共 50 条

[1] Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors
Knoll, Lars
Zhao, Qing-Tai
Nichau, Alexander
Trellenkamp, Stefan
Richter, Simon
Schaefer, Anna
Esseni, David
Selmi, Luca
Bourdelle, Konstantin K.
Mantl, Siegfried
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (06) : 813 - 815
[2] Are Si/SiGe Tunneling Field-Effect Transistors a Good Idea?
Koester, S. J.
Lauer, I.
Majumdar, A.
Cai, J.
Sleight, J.
Bedell, S.
Solomon, P.
Laux, S.
Chang, L.
Koswatta, S.
Haensch, W.
Tomasini, P.
Thomas, S.
SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, 33 (06): : 357 - 361
[3] Design guideline of Si-based L-shaped tunneling field-effect transistors
Inter-University Semiconductor Research Center , School of Electrical Engineering and Computer Science , Seoul National University, Seoul 151-742, Korea, Republic of
不详
不详
Jpn. J. Appl. Phys., 6 PART 2
[4] Ultrathin body InAs tunneling field-effect transistors on Si substrates
Ford, Alexandra C.
Yeung, Chun Wing
Chuang, Steven
Kim, Ha Sul
Plis, Elena
Krishna, Sanjay
Hu, Chenming
Javey, Ali
APPLIED PHYSICS LETTERS, 2011, 98 (11)
[5] Design Guideline of Si-Based L-Shaped Tunneling Field-Effect Transistors
Kim, Sang Wan
Choi, Woo Young
Sun, Min-Chul
Kim, Hyun Woo
Park, Byung-Gook
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (06)
[6] Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors
Glass, S.
von den Driesch, N.
Strangio, S.
Schulte-Braucks, C.
Rieger, T.
Narimani, K.
Buca, D.
Mantl, S.
Zhao, Q. T.
APPLIED PHYSICS LETTERS, 2017, 111 (26)
[7] Low frequency noise of silicon based tunneling field effect transistors
Song, Hyeong-Sub
Lim, Dong-Hwan
Kwon, Sung-Kyu
Kim, So-Yeong
Lee, Ga-Won
Choi, Chang-Hwan
Lee, Hi-Deok
2018 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC), 2018, : 537 - 538
[8] A complementary ternary inverter based on the line tunneling field effect transistors
Lu, Bin
Wang, Dawei
Chai, Guoqiang
Chen, Yulei
Li, Zhu
Sun, Jiale
Lu, Hongliang
MICROELECTRONICS JOURNAL, 2024, 145
[9] Silicon Tunneling Field-Effect Transistors With Tunneling in Line With the Gate Field
Fischer, Inga A.
Bakibillah, A. S. M.
Golve, Murali
Haehnel, Daniel
Isemann, Heike
Kottantharayil, Anil
Oehme, Michael
Schulze, Joerg
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) : 154 - 156
[10] RESONANT TUNNELING FIELD-EFFECT TRANSISTORS
WOODWARD, TK
MCGILL, TC
BURNHAM, RD
CHUNG, HF
SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (01) : 1 - 9

← 1 2 3 4 5 →