Effect of single and multilevel artificial inter-vertebral disc replacement in lumbar spine: A finite element study

被引:15
|
作者
Biswas, Jayanta Kumar [1 ]
Rana, Masud [2 ]
Malas, Anindya [1 ]
Roy, Sandipan [3 ]
Chatterjee, Subhomoy [4 ]
Choudhury, Sandeep [3 ]
机构
[1] Natl Inst Technol, Dept Mech Engn, Patna, Bihar, India
[2] Indian Inst Engn Sci & Technol, Dept Aerosp Engn & Appl Mech, POB Garden, Sibpur 711103, W Bengal, India
[3] SRM Inst Sci & Technol, Dept Mech Engn, Chennai, Tamil Nadu, India
[4] Cent Univ Rajasthan, Dept Sports Biomech, Ajmer, Rajasthan, India
关键词
Lumbar spine; inter-vertebral disc; ROM; disc stress; finite element analysis; LOW-BACK-PAIN; FUSION; ARTHROPLASTY; FIXATION; MOBILITY; SEGMENTS;
D O I
10.1177/03913988211001875
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
Degenerative disc disease (DDD) in lumbar spine is one of the major musculoskeletal disorders that cause low back pain (LBP). The intervertebral disc structure and dynamics of the lumbar spine are significantly affected by lumbar DDD, leading to a reduced range of motion (ROM), muscle weakness and gradual degradation. Spinal fusion and inter-vertebral disc replacement prostheses are two major surgical methods used for treating lumbar DDD. The aim of this present study is to examine biomechanical impacts of single level (L3-L4 and L4-L5) and multi level (L3-L4-L5) inter-vertebral disc replacement in lumbar spine (L2-L5) and to compare the performance with intact spine. Finite element (FE) analysis has been used to compare the mobility and stress distribution of all the models for four physiological movements, namely flexion, extension, left and right lateral bending under 6, 8 and 10 Nm moments. Spinal fusion implants completely restrict the motion of the implanted segment and increase disc stress at the adjacent levels. In contrast to that, the results single level ADR models showed closer ROM and disc stress to natural model. At the spinal segments adjacent to the implantation, single level ADR shows lower chance of disc degeneration. However, significantly increased ROM was observed in case of double level ADR.
引用
收藏
页码:193 / 199
页数:7
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