Highly sensitive magnetic sensing method using magnetoresitance devices

被引：4
作者：
Kaiju, H [1 ]
Saisho, K [1 ]
Shiiki, K [1 ]
机构：
[1] Keio Univ, Dept Appl Phys & Physicoinformat, Yokohama, Kanagawa 2238522, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 8A期
关键词：
magnetic sensing method; Hartley oscillator; feedback loop; magnetoresistance effect; sensing current;
D O I：
10.1143/JJAP.43.5600
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A highly sensitive magnetic sensing method using magnetoresistance devices is proposed. An InSb magnetic sensing device was used in the feedback loop of a Hartley oscillator. The oscillation starts when the resistance of the InSb magnetic sensing device changes in the external magnetic field as the oscillation condition is fulfilled. We can detect the magnetic I or 0 signal, corresponding to oscillation or nonoscillation, respectively. Output response and error rate in our magnetic sensing for the detection of oscillation were invesitigated. As a result, a high output response of I V-pp was obtained even if the electric sensing current which flows into the InSb magnetic sensing device was 450 muA. The resistance change of more than 30 Q is required in order to maintain an error rate of less than 10(-5). Therefore, this magnetic sensing method has potential application in highly sensitive magnetic sensors.
引用
收藏
页码：5600 / 5603
页数：4
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