Low-power widely tunable GM-C filter with an adaptive DC-blocking, triode-biased MOSFET transconductor

被引:36
作者
Hori, S [1 ]
Maeda, T [1 ]
Matsuno, N [1 ]
Hida, H [1 ]
机构
[1] NEC Corp Ltd, Syst Devices Res Labs, Tsukuba, Ibaraki 3058501, Japan
来源
ESSCIRC 2004: PROCEEDINGS OF THE 30TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE | 2004年
关键词
D O I
10.1109/ESSCIR.2004.1356627
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a new transconductor to achieve a wide continuous-tuning-range filter applicable to IEEE802.11a/b/g W-LANs, W-CDMA, and Bluetooth, without sacrificing power consumption. The wide tuning range is achieved by employing triode-biased input MOSFETs, whose transconductance is widely tuned with drain bias. The transconductor also employs an adaptive DC-blocking circuit that suppresses an idle current in high transconductance mode, resulting in minimizing the power consumption of the transconductor. A 4th-order butterworth low-pass filter using this new transconductor exhibits a cutoff frequency tuning range of 0.5-12 MHz with power consumption of 1.1 - 4.7 mW. The tuning range is 5 times wider than other works with low power consumption.
引用
收藏
页码:99 / 102
页数:4
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