Deep etched DBR gratings in InP for photonic integrated circuits

被引：9

作者：

Docter, B. ^{[1
]}

Geluk, E. J. ^{[1
]}

Sander-Jochem, M. J. H. ^{[1
]}

Karouta, F. ^{[1
]}

Smit, M. K. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, COBRA Interuniv Res Inst Commun Technol, Fac Elect Engn, Optoelect Devices Grp, POB 513, NL-5600 MB Eindhoven, Netherlands

来源：

2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年

关键词：

D O I：

10.1109/ICIPRM.2007.381164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel fabrication process was developed to realize high quality SiOx masks for Cl-2 based ICP etching of InP. First order DBR mirrors, 3 mu m deep, were realized that can be used in photonic circuits. The process can be used in combination with conventional optical lithography, reducing production cost.

引用

页码：226 / 228

页数：3