Optical probing of electronic fractional quantum Hall states

被引：3
作者：
Blokland, J. H. [1 ]
Christianen, P. C. M. [1 ]
Ashkinadze, B. M. [2 ]
Rudenkov, V. V. [1 ]
Pfeiffer, L. N. [3 ]
Maan, J. C. [1 ]
机构：
[1] Radboud Univ Nijmegen, Inst Mol & Mat, High Field Magnet Lab, Toernooiveld 7, NL-6525 ED Nijmegen, Netherlands
[2] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel
[3] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
来源：
PHYSICAL REVIEW B | 2010年 / 81卷 / 20期
关键词：
PHOTOLUMINESCENCE; INTEGER; EXCITONS; ENERGY; RESONANCE; FLUID; GAS;
D O I：
10.1103/PhysRevB.81.201304
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the observation of a fine structure in the photoluminescence emission of high-mobility GaAs/AlGaAs single heterojunctions in the fractional quantum Hall regime. A splitting of the emission band into three lines is found both at filling factor nu = 2/3 and in the region 2/5 > nu > 1/3. The dependencies on filling factor, electron density, and temperature show that the fine structure arises from the recombination of fractionally charged elementary excitations of the two-dimensional electron liquid and an itinerant valence-band hole. These quasiparticle excitations (anyon excitons) exhibit a dispersion relation with an absolute minimum at large momentum, leading to a characteristic, broad emission band at the low-energy side of the photoluminescence spectrum around nu = 1/3.
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页数：4
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