Effect of normal strain and external electric field on electronic properties of the GeC bilayer: A first-principles study
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作者:
Min, Luo
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Shanghai Polytech Univ, Dept Phys, Shanghai 201209, Peoples R ChinaShanghai Polytech Univ, Dept Phys, Shanghai 201209, Peoples R China
Min, Luo
[1
]
E, Xu Yu
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Shang Hai Jian Qiao Univ, Dept Elect Engn, Shanghai 201306, Peoples R ChinaShanghai Polytech Univ, Dept Phys, Shanghai 201209, Peoples R China
E, Xu Yu
[2
]
Hao, Shen Yu
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East China Normal Univ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaShanghai Polytech Univ, Dept Phys, Shanghai 201209, Peoples R China
Hao, Shen Yu
[3
]
机构:
[1] Shanghai Polytech Univ, Dept Phys, Shanghai 201209, Peoples R China
[2] Shang Hai Jian Qiao Univ, Dept Elect Engn, Shanghai 201306, Peoples R China
[3] East China Normal Univ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
The electronic properties of the GeC bilayer with different stacking patterns are investigated using density functional theory. A different behavior shows up when applying normal strain and electric field (E-field). Under normal strain, the bandgap becomes very elastic and presents an indirect-to-direct bandgap transition. By applying the E-field, the intrinsic bandgap swiftly reduces to zero. The major modulation of the bandgap is mainly due to the migration of Ge-p orbitals in the conduction band. Our results reveal the flexible electronic properties of the GeC bilayer, which would provide a theoretical reference for the development of the GeC bilayer.
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Washington Univ, Dept Phys, St Louis, MO 63130 USA
Washington Univ, Inst Mat Sci & Engn, St Louis, MO USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
Fei, Ruixiang
Faghaninia, Alireza
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Washington Univ, Dept Energy Environm & Chem Engn, St Louis, MO USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
Faghaninia, Alireza
Soklaski, Ryan
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Washington Univ, Dept Phys, St Louis, MO 63130 USA
Washington Univ, Inst Mat Sci & Engn, St Louis, MO USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
Soklaski, Ryan
Yan, Jia-An
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Towson Univ, Dept Phys Astron & Geosci, Towson, MD USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
Yan, Jia-An
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Lo, Cynthia
Yang, Li
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Washington Univ, Dept Phys, St Louis, MO 63130 USA
Washington Univ, Inst Mat Sci & Engn, St Louis, MO USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
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Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
Geim, A. K.
Novoselov, K. S.
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Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
机构:
Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USATamkang Univ, Dept Phys, Tamsui 25137, Taiwan
机构:
Washington Univ, Dept Phys, St Louis, MO 63130 USA
Washington Univ, Inst Mat Sci & Engn, St Louis, MO USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
Fei, Ruixiang
Faghaninia, Alireza
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机构:
Washington Univ, Dept Energy Environm & Chem Engn, St Louis, MO USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
Faghaninia, Alireza
Soklaski, Ryan
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h-index: 0
机构:
Washington Univ, Dept Phys, St Louis, MO 63130 USA
Washington Univ, Inst Mat Sci & Engn, St Louis, MO USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
Soklaski, Ryan
Yan, Jia-An
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Towson Univ, Dept Phys Astron & Geosci, Towson, MD USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
Yan, Jia-An
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Lo, Cynthia
Yang, Li
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Washington Univ, Dept Phys, St Louis, MO 63130 USA
Washington Univ, Inst Mat Sci & Engn, St Louis, MO USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
Geim, A. K.
Novoselov, K. S.
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Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
机构:
Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USATamkang Univ, Dept Phys, Tamsui 25137, Taiwan