Effect of normal strain and external electric field on electronic properties of the GeC bilayer: A first-principles study

被引:3
作者
Min, Luo [1 ]
E, Xu Yu [2 ]
Hao, Shen Yu [3 ]
机构
[1] Shanghai Polytech Univ, Dept Phys, Shanghai 201209, Peoples R China
[2] Shang Hai Jian Qiao Univ, Dept Elect Engn, Shanghai 201306, Peoples R China
[3] East China Normal Univ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
基金
上海市自然科学基金;
关键词
BAND-GAP; DENSITY; SILICENE; GRAPHENE; BORON;
D O I
10.1063/1.5109686
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The electronic properties of the GeC bilayer with different stacking patterns are investigated using density functional theory. A different behavior shows up when applying normal strain and electric field (E-field). Under normal strain, the bandgap becomes very elastic and presents an indirect-to-direct bandgap transition. By applying the E-field, the intrinsic bandgap swiftly reduces to zero. The major modulation of the bandgap is mainly due to the migration of Ge-p orbitals in the conduction band. Our results reveal the flexible electronic properties of the GeC bilayer, which would provide a theoretical reference for the development of the GeC bilayer.
引用
收藏
页数:7
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