High inversion current in silicon nanowire field effect transistors

被引：73
作者：
Koo, SM [1 ]
Fujiwara, A
Han, JP
Vogel, EM
Richter, CA
Bonevich, JE
机构：
[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA
[2] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[3] Natl Inst Stand & Technol, Div Met, Gaithersburg, MD 20899 USA
来源：
NANO LETTERS | 2004年 / 4卷 / 11期
关键词：
D O I：
10.1021/nl0486517
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional "top-down" approach by using electron-beam lithography. The SiNW device shows higher inversion channel current density than the control devices. The extracted electron inversion mobility of the 20 nm width nanowire channel (approximate to1000 cm(2)/Ns) is found to be 2 times higher than that of the reference MOSFET (approximate to480 cm(2)Vs) of large dimension (W greater than or equal to 1 mum). We attribute this mobility increase to strain-induced changes in the band structure of the SiNW after oxidation.
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收藏
页码：2197 / 2201
页数：5
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