Diffusion limit of a semiconductor Boltzmann-Poisson system

被引：45
作者：
Masmoudi, Nader
Tayeb, Mohamed Lazhar
机构：
[1] NYU, Courant Inst Math Sci, New York, NY 10012 USA
[2] Fac Sci Tunis, Dept Math, El Manar 1060, Tunisia
来源：
SIAM JOURNAL ON MATHEMATICAL ANALYSIS | 2007年 / 38卷 / 06期
关键词：
kinetic transport equations; semiconductor Boltzmann-Poisson system; drift-diffusion model; entropy dissipation; moment method; velocity averaging lemma; renormalized solution; INCOMPRESSIBLE FLUID-MECHANICS; BOUNDARY VALUE-PROBLEM; KINETIC-EQUATIONS; APPROXIMATION; COMPACTNESS; REGULARITY;
D O I：
10.1137/050630763
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
The paper deals with the diffusion limit of the initial-boundary value problem for the multidimensional semiconductor Boltzmann-Poisson system. Here, we generalize the onedimensional results obtained in [5] to the case of several dimensions using global renormalized solutions. The method of moments and a velocity averaging lemma are used to prove the convergence of the renormalized solutions to the semiconductor Boltzmann-Poisson system towards a global weak solution of the drift-diffusion-Poisson model.
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页码：1788 / 1807
页数：20
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