Enhancement of photoelectrochemical activity of SnS thin-film photoelectrodes using TiO2, Nb2O5, and Ta2O5 metal oxide layers

被引：17
作者：
Vequizo, Junie Jhon M. [1 ]
Yokoyama, Masanori [1 ]
Ichimura, Masaya [2 ]
Yamakata, Akira [1 ,3 ]
机构：
[1] Toyota Technol Inst, Grad Sch Engn, Quantum Interface Lab, Nagoya, Aichi 4688511, Japan
[2] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Nagoya, Aichi 4668555, Japan
[3] Japan Sci & Technol Agcy JST, Precursory Res Embryon Sci & Technol PRESTO, Kawaguchi, Saitama 3320012, Japan
来源：
APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 06期
关键词：
ZINC-OXIDE; ELECTROCHEMICAL DEPOSITION; VISIBLE-LIGHT; CATHODIC ELECTRODEPOSITION; WATER; SEMICONDUCTORS; PHOTOCATHODES; PULSE; TAON;
D O I：
10.7567/APEX.9.067101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tin sulfide (SnS) fine photoelectrodes fabricated by three-step pulsed electrodeposition were active for H-2 evolution. The incident-photon-conversion-efficiency increases from 900 nm and offers a good fit with the absorption spectrum. The activity was enhanced by 3.4, 3.0, and 1.8 times compared to bare SnS by loading Nb2O5, TiO2, and Ta2O5, respectively. Nb2O5 was most efficient because its conduction band is low enough to facilitate effective electron transfer from SnS; it also has sufficiently high potential for H-2 evolution. The overall activity is determined by the competitive interfacial electron transfer between SnS/metal-oxide and metal-oxide/water. Therefore, constructing appropriate heterojunctions is necessary for further improving photoelectrochemical systems. (C) 2016 The Japan Society of Applied Physics
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页数：4
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