Analysis of strained-silicon-on-insulator double-gate MOS structures

被引：10

作者：

Barin, N ^{[1
]}

Fiegna, C ^{[1
]}

Sangiorgi, E ^{[1
]}

机构：

[1] Univ Ferrara, Dept Engn, I-44100 Ferrara, Italy

来源：

ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2004年

关键词：

D O I：

10.1109/ESSDER.2004.1356516

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra-thin body double-gate (DG) MOS structures with strained silicon are investigated by the solution of the 1-D Schrodinger and Poisson equations, with open boundary conditions on the wave functions in the gate electrodes. The electrostatics of this device architecture and its dependence on the amount of strain and on the thickness of the silicon layer is analyzed in terms of subband structure, subband population, carrier distribution within the strained-silicon layer, charge-voltage characteristics and gate tunneling current.

引用

页码：169 / 172

页数：4