Analyses of structure design and Ids nonlinear modeling for 5-watt multi-cell microwave GaAs MESFET

被引：0

作者：

Gao, YF ^{[1
]}

Gu, C ^{[1
]}

机构：

[1] Xian Highway Univ, Xian 710064, Shaanxi PC, Peoples R China

来源：

TELSIKS '99: 4TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICES, PROCEEDINGS, VOLS 1 AND 2 | 1999年

关键词：

GaAs MESFET; EMS; large signal model;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics are described about GaAs MESFET with 5-watt large-gate-width multi-cell structure, including optimal structure design, processes and high breakdown voltage and overcurrent capacity. Also, we put forward the modified Id. nonlinear model, and the agreement with experiment using this typical model was better than the results by directly employing the common models.

引用

页码：400 / 402

页数：3

共 9 条

[1] A MESFET MODEL FOR USE IN THE DESIGN OF GAAS INTEGRATED-CIRCUITS
CURTICE, WR
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) : 448 - 456
[2] JASTRZEBSKI AK, 1988, IEEE C LARG SIGN DEV
[3] COMPUTER CALCULATION OF LARGE-SIGNAL GAAS-FET AMPLIFIER CHARACTERISTICS
MATERKA, A
KACPRZAK, T
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (02) : 129 - 135
[4] MCCAMANT AJ, 1989, IEEE T MTT, V37, P822
[5] RODRIGUEZTELLEZ J, 1993, MICROWAVE J, V36, P280
[6] Root D. E., 1991, P 15 ARMMS C BATH EN
[7] ANALYTICAL MODEL OF GAAS MESFETS
SHUR, MS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 612 - 618
[8] GAAS-FET DEVICE AND CIRCUIT SIMULATION IN SPICE
STATZ, H
NEWMAN, P
SMITH, IW
PUCEL, RA
HAUS, HA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 160 - 169
[9] DESIGN OF BROAD-BAND POWER GAAS-FET AMPLIFIERS
TAJIMA, Y
MILLER, PD
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) : 261 - 267

← 1 →