Ionizing Radiation Detectors Based on Solution-Grown Organic Single Crystals

被引:58
作者
Fraboni, Beatrice [1 ]
Fraleoni-Morgera, Alessandro [2 ,3 ]
Zaitseva, Natalia [4 ]
机构
[1] Univ Bologna, Dept Phys & Astron, Viale Berti Pichat 6-2, I-40127 Bologna, Italy
[2] Univ Trieste, Dept Engn & Architecture, Via Alfonso Valerio 10, I-34127 Trieste, Italy
[3] Elettra Sincrotrone Trieste SCpA SS 14, Km 163-5, I-341499 Basovizza, TS, Italy
[4] Lawrence Livermore Natl Lab, 7000 East Ave, Livermore, CA 94550 USA
关键词
ANISOTROPIC CHARGE-TRANSPORT; THIN-FILM TRANSISTORS; MU-T-CZ; HIGH-PERFORMANCE; SCINTILLATION PROPERTIES; PLASTIC SCINTILLATORS; CZOCHRALSKI TECHNIQUE; FAST-NEUTRON; POLYMER; CONDUCTIVITY;
D O I
10.1002/adfm.201502669
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic single crystals (OSCs) have ideal qualities (well defined structure and morphology, lack of grain boundaries, high purity, 3D long range order, good electronic transport properties) for several technological applications, in particular as key components for electronic devices. It is only recently that OSCs have been considered as ionizing radiation detectors, and the latest developments in this field are here reported. In the first section, various methods for OSC growth are described, with emphasis on cost-effective, solution-based approaches capable of delivering large volume, well performing crystals. The second section is focused on the use of solution-grown OSCs as scintillators (i.e., as high energy photon to UV-vis photon conversion), highlighting the ability of cm-scale OSCs to effectively detect neutrons and to carry out neutrons-gamma pulse-shape discrimination tasks. Finally, the third section describes the use of semiconducting, solution-grown OSCs as effective solid state direct detectors (i.e., directly converting high energy photons into charge carriers), evidencing extremely promising performances in terms of operability in environmental conditions (i.e., no need for encapsulation), radiation hardness, linear response and low operating voltage.
引用
收藏
页码:2276 / 2291
页数:16
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