Spin-dependent resonant tunneling in double-barrier magnetic heterostructures

被引：16
作者：
Petukhov, AG [1 ]
Demchenko, DO [1 ]
Chantis, AN [1 ]
机构：
[1] S Dakota Sch Mines & Technol, Dept Phys, Rapid City, SD 57701 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 04期
关键词：
D O I：
10.1116/1.1305332
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent advances in molecular beam epitaxial growth made it possible to fabricate exotic heterostructures comprised of magnetic films or buried layers (ErAs,GaxMn1-xAs) integrated with conventional semiconductors (GaAs) and to explore quantum transport in these heterostructures. It is particularly interesting to study spin-dependent resonant tunneling in double-barrier resonant tunneling diodes (RTDs) with magnetic elements such as GaAs/AlAs/ErAs/AlAs/GaAs and GaAs/AlAs/GaxMn1-xAs/AlAs/GaAs. We present the results of our theoretical studies and computer simulations of transmission coefficients and current-voltage characteristics of RTDs based on these double-barrier structures. In particular, resonant tunneling of holes in the GaxMn1-xAs-based RTDs is considered. Our approach is based on k.p perturbation theory with exchange splitting effects taken into account. (C) 2000 American Vacuum Society. [S0734-211X(00)04604-7].
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页码：2109 / 2113
页数：5
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