Interface-directed sol-gel: direct fabrication of the covalently attached ultraflat inorganic oxide pattern on functionalized plastics

被引:13
作者
Gan ShengHua [1 ]
Yang Peng [1 ]
Yang WanTai [1 ]
机构
[1] Beijing Univ Chem Technol, Coll Mat Sci & Engn, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China
基金
中国国家自然科学基金;
关键词
surface patterning; silicon oxide; sol-gel; polymer surface modification; functional coatings; SELF-ASSEMBLED MONOLAYERS; RING-OPENING POLYMERIZATION; GAS BARRIER COATINGS; SILICON-OXIDE; SURFACE MODIFICATION; CATALYTIC OXIDATION; HYBRID MATERIALS; SIO2; FILM; THIN; CHEMISTRY;
D O I
10.1007/s11426-010-0022-2
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
For plastic electronics and optics, the fabrication of smooth, transparent and stable crack-free inorganic oxide films (and patterning) on flexible polymeric substrates with strong bonding strength and controllable thickness from nanometers to micrometers is a key but still remains a challenge. Among versatile inorganic oxides, silica oxide film as SiOx is especially important because this semiconductor material could provide crucial properties in devices or serve as a base layer for further multilayer construction. In this paper, we describe a new interface-directed sol-gel method to fabricate flexible high quality silicon oxide film onto commodity plastics. The resulting crack-free silica film has strong covalent bonding with polymer substrates, homogeneous morphology with ultralow roughness, highly optical transparency, tunable thickness from nm to mu m, and easy patterning ability. Such fabrication strategy relies on a novel photocatalytic oxidation reaction by photosensitive ammonium persulfate (APS), which is able to fabricate highly reactive hydroxyl monolayer surface on inert polymeric substrates. This kind of hydroxylated surface could serve as nucleation and growth sites to initiate surface sol-gel process. As a result, well-defined SiOx film deposition (gelation) occurs, and patterned hydroxylation regions could be easily utilized to induce the formation of patterned oxide film arrays. Our strategy also excludes the requirements of clean room and vacuum devices so as to fulfill low-cost and fast fabrication demands. Two application examples from such high quality SiOx layer onto plastics are given but should not be limited within these. One is that oxygen permeation rate of SiOx deposited polymer film decreases 25 times than pristine polymer substrate, which is good for the potential packaging materials. The other one is that silanization monolayer, for example, 3-aminopropyltriethoxysilane (APTES), could be successfully constructed onto silica layer through classical silanization reaction, which is applicable for many potential purposes, for instance, proteins could be accordingly immobilized onto plastic support with effective signal-to-background ratio. Moreover, we further demonstrate that this interface-directed sol-gel strategy is a general method which could be successfully extended to other high quality oxide film fabrication, e. g., TiO2.
引用
收藏
页码:173 / 182
页数:10
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