Void growth via dislocation pileup impingement on grain boundary

被引：3

作者：

Borovikov, Valery ^{[1
,2
]}

Mendelev, Mikhail I. ^{[1
,2
]}

机构：

[1] Ames Lab, Div Mat Sci & Engn, Ames, IA 50011 USA

[2] NASA, Ames Res Ctr, KBR Inc, Intelligent Syst Div, MS N269-1, Moffett Field, CA 94035 USA

来源：

MATERIALS LETTERS | 2021年 / 291卷

基金：

美国能源部;

关键词：

Dislocation pileup; Void growth mechanism; Grain boundary; Molecular dynamics simulation;

D O I：

10.1016/j.matlet.2021.129542

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of edge dislocations, impinging on grain boundary in fcc Fe near a preexisting void on the volume of this void, was studied using MD simulation. It was found that virtually unlimited growth of the void via this mechanism is possible under certain conditions. To the best of our knowledge this is the first atomistic simulation study, demonstrating feasibility of this void growth mechanism. (c) 2021 Elsevier B.V. All rights reserved.

引用

页数：4

共 15 条

[1] DISLOCATION THEORY OF FRACTURE OF CRYSTALS [J].