Wafer-Scale Oxygen-Doped MoS2 Monolayer

被引：67

作者：

Wei, Zheng ^{[1
,2
]}

Tang, Jian ^{[1
,2
]}

Li, Xuanyi ^{[1
,2
]}

Chi, Zhen ^{[1
]}

Wang, Yu ^{[1
,2
]}

Wang, Qinqin ^{[1
,2
]}

Han, Bo ^{[3
,4
]}

Li, Na ^{[1
,2
]}

Huang, Biying ^{[1
,2
]}

Li, Jiawei ^{[1
,2
]}

Yu, Hua ^{[1
,2
]}

Yuan, Jiahao ^{[1
,2
]}

Chen, Hailong ^{[1
,2
]}

Sun, Jiatao ^{[1
,5
]}

Chen, Lan ^{[1
,2
]}

Wu, Kehui ^{[1
,2
]}

Gao, Peng ^{[1
,3
,4
,6
,7
,8
]}

He, Congli ^{[9
]}

Yang, Wei ^{[1
,2
]}

Shi, Dongxia ^{[1
,2
,10
]}

Yang, Rong ^{[1
,2
,11
]}

Zhang, Guangyu ^{[1
,2
,10
,11
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China

[3] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China

[4] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China

[5] Beijing Inst Technol, MIIT Key Lab Low Dimens Quantum Struct & Devices, Sch Informat & Elect, Beijing 100081, Peoples R China

[6] Peking Univ, Interdisciplinary Inst Light Element Quantum Mat, Beijing 100871, Peoples R China

[7] Peking Univ, Res Ctr Light Element Adv Mat, Beijing 100871, Peoples R China

[8] Peking Univ, Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

[9] Beijing Normal Univ, Inst Adv Mat, Beijing 100875, Peoples R China

[10] Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China

[11] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China

来源：

SMALL METHODS | 2021年 / 5卷 / 06期

基金：

中国国家自然科学基金;

关键词：

band engineering; field-effect transistors; molybdenum disulfide; oxygen substitution; wafer-scale doping; TRANSITION-METAL DICHALCOGENIDES; GROWTH; NANOSHEETS; EFFICIENT; STRAIN; LAYERS; FILMS;

D O I：

10.1002/smtd.202100091

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Monolayer MoS2 is an emergent 2D semiconductor for next-generation miniaturized and flexible electronics. Although the high-quality monolayer MoS2 is already available at wafer scale, doping of it uniformly remains an unsolved problem. Such doping is of great importance in view of not only tailoring its properties but also facilitating many potential large-scale applications. In this work, the uniform oxygen doping of 2 in wafer-scale monolayer MoS2 (MoS2-xOx) with tunable doping levels is realized through an in situ chemical vapor deposition process. Interestingly, ultrafast infrared spectroscopy measurements and first-principles calculations reveal a reduction of bandgaps of monolayer MoS2-xOx with increased oxygen-doping levels. Field-effect transistors and logic devices are also fabricated based on these wafer-scale MoS2-xOx monolayers, and excellent electronic performances are achieved, exhibiting promise of such doped MoS2 monolayers.

引用

页数：8

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