Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer

被引：4
作者：
Eadi, Sunil Babu [1 ]
Song, Hyeong-Sub [1 ]
Song, Hyun-dong [1 ]
Oh, Jungwoo [2 ]
Lee, Hi-Deok [1 ]
机构：
[1] Chungnam Natl Univ, Dept Elect Engn, Daejeon, South Korea
[2] Yonsei Univ, Yonsei Inst Convergence Technol, Sch Integrated Technol, Incheon, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2020年 / 219卷
基金：
新加坡国家研究基金会;
关键词：
Contact resistance; Nickel silicide; Rapid thermal annealing; Ho interlayer; Kelvin four-point probe; METAL SILICIDES; THIN-FILMS; ISSUES; MO;
D O I：
10.1016/j.mee.2019.111153
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, effect of Ho interlayer was investigated in nickel silicide (NiSi)/Si junction for contact resistance reduction. A thin Holmium (Ho) interlayer was applied to Ni/(p/n)-Si contact to reduce contact resistance between NiSi and Si. Thickness of 5 nm Ho layer was first deposited on As-doped n-type Si layer and BF2-doped p-type Si layer, followed by in situ deposition of a 15 nm-thick Ni film and 10 nm-thick TiN film. After the formation of the NiSi by rapid thermal annealing (RTA) at 450 degrees C for 30 s, specific contact resistivity (rho(c)) between Ni-silicide and doped silicon region is extracted. There is a great reduction of the rho(c), that is, from 9.84 x 10(-5) Omega cm(2) to 1.16 x 10(-5) Omega.cm(2) for n-Si and 6.24 x 10(-5) Omega.cm(2) to 1.84 x 10(-5) Omega.cm(2) for p-Si substrates, respectively. The improved interface morphology by introducing of Ho interlayer could be responsible for the rho(c) reduction.
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页数：6
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