Lanthanide-doped silica layers via the sol-gel process: luminescence and process parameters

被引:4
作者
Schem, M [1 ]
Bredol, M [1 ]
机构
[1] Univ Appl Sci, Fachsch Munster, Dept Chem Engn, D-48565 Steinfurt, Germany
关键词
photoluminescence; lanthanides; silica; sol gel chemistry; luminescent layers; optical coatings;
D O I
10.1016/j.tsf.2004.08.116
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The introduction of luminescent materials into a sol-gel-derived silica layer is a promising way for the creation of optical applications on the basis of UV-sensitive waveguides. In this work, the preparation of tetraethylorthosilicate (TEOS)-derived silica layers doped with terbiumtrisbenzoate is described. Results with respect to the layer thickness, the photoluminescence of doped bulk silica materials compared to doped silica layers, the influence of ultrasonic treatment during preparation, and the temperature stability are given. Atomic force microscopy measurements show that the withdrawal speed during the sol-gel process can be optimized in order to minimize the surface roughness of the films deposited. Nanoindentation experiments reveal that the hardness of layers cured at 200 degreesC is comparable to that of ordinary glass. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:31 / 35
页数:5
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