Improved Vertical GaN Diodes with Mg Ion Implanted Junction Termination Extension

Improved GaN Schottky barrier diodes (SBDs) and p-i-n diodes with edge termination formed by either a field plate or junction termination extension (JTE) achieved by ion implanted and symmetric multicycle rapid thermal annealing (SMRTA) are demonstrated. The devices with JTE exhibited substantially reduced leakage currents and improved turn-on characteristics. This is attributed to the elimination of the plasma process steps. The breakdown characteristics were studied by electroluminescence imaging, and is indicative of avalanche behavior. The realization of vertical GaN devices with low reverse leakage and ion implanted termination regions represents a key step for future power electronic devices.