High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP

被引：0
|
作者：
Skogen, EJ [1 ]
Barton, JS
Raring, JW
Coldren, LA
Denbaars, SP
机构：
[1] Univ Calif Santa Barbara, Elect & Comp Engn Dept, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期
关键词：
photoluminescence; metalorganic chemical vapor deposition; semiconducting indium phosphide; laser diodes;
D O I：
10.1016/j.jcrysgro.2004.09.008
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
High index contrast InGaAsP/InP gratings are useful in the design of next generation photonic integrated circuits. Here, we investigate the process conditions used in the formation of such gratings. We find that the reactive ion etch conditions have a strong influence on the radiative efficiency in the grating region. We also show that the use of a combination of TBP and TBA in the heat-up phase of growth results in a reduction of the group-V exchange in the grating region, thereby increasing the radiative efficiency, while not adversely affecting non-grating regions. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：564 / 569
页数：6
相关论文
共 50 条
  • [41] Long-Wavelength VCSEL Using High-Contrast Grating
    Rao, Yi
    Yang, Weijian
    Chase, Christopher
    Huang, Michael C. Y.
    Worland, D. Philip
    Khaleghi, Salman
    Chitgarha, Mohammad Reza
    Ziyadi, Morteza
    Willner, Alan E.
    Chang-Hasnain, Connie J.
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (04)
  • [42] Optical Resonator using High Index Contrast Grating and Total Reflection
    Okayama, H.
    Miyazaki, M.
    Fukada, K.
    Nakajima, H.
    2010 15TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC), 2010, : 394 - +
  • [43] Large fabrication tolerance for VCSELs using high-contrast grating
    Zhou, Ye
    Huang, Michael C. Y.
    Chang-Hasnain, Connie J.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (5-8) : 434 - 436
  • [44] High performance 1.3 mu m and 1.55 mu m InGaAsP/InP strained layer quantum well lasers grown by LP-MOCVD
    Ma, XY
    Wang, ST
    Xiong, FK
    Guo, L
    Wang, ZM
    Wang, LM
    Zhang, XY
    Sun, GX
    Xia, CH
    Zhu, T
    Yang, YL
    Zhang, HQ
    He, GP
    Yao, SQ
    Bi, KK
    Chen, LH
    INTEGRATED OPTOELECTRONICS, 1996, 2891 : 34 - 39
  • [45] Novel High Efficiency Vertical Optical Coupler Using Subwavelength High Contrast Grating
    Zhu, Li
    Karagodsky, Vadim
    Yang, Weijian
    Chang-Hasnain, Connie J.
    2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2011,
  • [46] High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100 mm InP substrates using PH3 and AsH3
    Liu, HG
    Wu, JQ
    Tao, N
    Firth, A
    Griswold, EM
    MacElwee, TW
    Bolognesi, CR
    JOURNAL OF CRYSTAL GROWTH, 2004, 267 (3-4) : 592 - 597
  • [47] Heterogeneously-integrated VCSEL using high-contrast grating on silicon
    Ferrara, James
    Zhu, Li
    Yang, Weijian
    Qiao, Pengfei
    Chang-Hasnain, Connie J.
    HIGH CONTRAST METASTRUCTURES IV, 2015, 9372
  • [48] Integrated High-Contrast-Grating Optical Sensor Using Guided Mode
    Liu, Anjin
    Hofmann, Werner H. E.
    Bimberg, Dieter H.
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2015, 51 (01)
  • [49] Long-Wavelength Tunable Detector Using High-Contrast Grating
    Yang, Weijian
    Gerke, S. Adair
    Zhu, Li
    Chase, Christopher
    Rao, Yi
    Chang-Hasnain, Connie J.
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2014, 20 (06) : 178 - 185
  • [50] MOVPE growth of Al-free 808 nm high power lasers using TBP and TBA in pure N2 ambient
    Tang, XH
    Zhang, BL
    Bo, BX
    Mei, T
    Chin, MK
    JOURNAL OF CRYSTAL GROWTH, 2006, 288 (01) : 23 - 26
12345