Effect of near-threshold ionization on electron attachment in gaseous dielectrics

被引：1
|
作者：
Sugawara, H
Ishigaki, T
Hirochi, Y
Sakai, Y
机构：
[1] Hokkaido Univ, Div Elect Informat, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan
[2] Hokkaido Univ, Grad Sch Engn, Div Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 11A期
关键词：
gaseous dielectric; electron attachment; ionization; threshold; electron avalanche; sulfur hexafluoride;
D O I：
10.1143/JJAP.43.7705
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It has been predicted that near-threshold ionization (NTI) in a gaseous dielectric inhibits the development of electron avalanche when the gaseous dielectric has a sufficient capability for low-energy electron attachment. The NTI leaves little energy for the primary and secondary electrons involved in the ionization; thus, both electrons can be captured by dielectric gas molecules without further ionization. A computational estimation indicates that this process can occur in SF6.
引用
收藏
页码：7705 / 7706
页数：2
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