Electronic and structural characteristics of zinc-blende wurtzite biphasic homostructure GaN nanowires

被引：35
作者：
Jacobs, Benjamin W.
Ayres, Virginia M.
Petkov, Mihail P.
Halpern, Joshua B.
He, Maoqi
Baczewski, Andrew D.
McElroy, Kaylee
Crimp, Martin A.
Zhang, Jiaming
Shaw, Harry C.
机构：
[1] Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA
[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[3] Howard Univ, Dept Chem, Washington, DC 20059 USA
[4] Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
[5] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA
来源：
NANO LETTERS | 2007年 / 7卷 / 05期
关键词：
D O I：
10.1021/nl062871y
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High-resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction, electron dispersive spectroscopy, electron energy loss spectroscopy, and fast Fourier transform techniques. A mechanism for growth is identified.
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收藏
页码：1435 / 1438
页数：4
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