Gain-flattened fiber amplifier from 1560 to 1580 nm wavelengths using an erbium-doped fiber amplifier

被引：0

作者：

Adikan, FRM ^{[1
]}

Mahdi, MA ^{[1
]}

Poopalan, P ^{[1
]}

Dimyati, K ^{[1
]}

Ahmad, H ^{[1
]}

机构：

[1] Univ Malaya, Dept Phys, Telekom Malaysia Photon Res Ctr, Kuala Lumpur 50603, Malaysia

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2000年 / 26卷 / 04期

关键词：

gain flattened; long band; erbium-doped fiber amplifier; optical amplifier;

D O I：

10.1002/1098-2760(20000820)26:43.0.CO;2-K

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple gain-flattened L-band erbium-doped fiber amplifier (EDFA) is demonstrated. An L-band flat gain range of 20 nm (1560-1580 nm) is achieved for use in wavelength-division multiplexing (WDM) transmission systems. Gain flatness with a 1 dB gain discrepancy is obtained through manipulation of the pump power, and no additional devices (gain equalizer, attenuator, fiber-Bragg grating) are required. (C) 2000 John Wiley & Sons, Inc.

引用

页码：221 / 223

页数：3

共 5 条

[1] Wideband, gain-flattened, erbium-doped fibre amplifiers with 3 dB bandwidths of >50nm [J].

Masuda, H ;

Kawai, S ;

Suzuki, KI ;

Aida, K .

ELECTRONICS LETTERS, 1997, 33 (12) :1070-1072

[2] Wideband erbium-doped fibre amplifiers with three-stage amplification [J].

Masuda, H ;

Kawai, S ;

Aida, K .

ELECTRONICS LETTERS, 1998, 34 (06) :567-568

[3]

SUDO S, 1997, OPTICAL FIBER AMPLIF, pCH3

[4] Broadband and gain-flattened amplifier composed of a 1.55 mu m-band and a 1.58 mu m-band Er3+-doped fibre amplifier in a parallel configuration [J].

Yamada, M ;

Ono, H ;

Kanamori, T ;

Sudo, S ;

Ohishi, Y .

ELECTRONICS LETTERS, 1997, 33 (08) :710-711

[5] Gain-flattened broadband Er3+-doped silica fibre amplifier with low noise characteristics [J].

Yamada, M ;

Ono, H ;

Ohishi, Y .

ELECTRONICS LETTERS, 1998, 34 (18) :1747-1748

← 1 →