Impedance study of reproducible switching memory effect

被引：10

作者：

Papagianni, C ^{[1
]}

Nian, YB ^{[1
]}

Wang, YQ ^{[1
]}

Wu, NJ ^{[1
]}

Ignatiev, A ^{[1
]}

机构：

[1] Univ Houston, Texas Ctr Supercond & Adv Mat, Houston, TX 77204 USA

来源：

2004 NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM, PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/NVMT.2004.1380824

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The reproducible switching and memory effect in thin film colossal magnetoresistive (CMR) materials has been further studied. A resistive memory device was made in a sandwich structure comprised of An or Pt top electrode on Pr0.7Ca0.3MnO3 (PCMO) on Pt/LaAlO3 (100) (LAO), on Pt/TiN/SiO2/Si, and on YBa2Cu3O7-delta (VBCO) on LaAlO3 (100) substrates. In these samples, polycrystalline PCMO films were deposited on polycrystalline Pt films, and (101) ordered PCMO films were epitaxially grown on c-oriented VBCO crystalline films. Both PCMO and YBCO films were deposited by pulse laser deposition (PLD). The top An electrode was made by dc-sputtering, and in the case of Pt top and bottom electrodes they were deposited by e-beam evaporation. We have characterized the temperature dependence of the device resistance change R(T) upon electric pulse switching. We have also measured the impedance spectroscopy Z(T,omega) of the device in the temperature range of 77K to 300K and the frequency range from 10 to 10(6) Hz for both the low- resistance and high-resistance states of the resistive memory device. The influence of intrinsic film defects on switching and fatigue properties of the non-volatile resistive memory device, and the switching mechanism itself are discussed.

引用

页码：125 / 128

页数：4

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