Voltage-controlled magnetic anisotropy in antiferromagnetic MgO-capped MnPt films

被引:18
作者
Chang, P-H [1 ,2 ]
Fang, W. [1 ,2 ]
Ozaki, T. [3 ]
Belashchenko, K. D. [1 ,2 ]
机构
[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
[2] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA
[3] Univ Tokyo, Inst Solid State Phys, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778581, Japan
基金
美国国家科学基金会;
关键词
Ferromagnetic materials - Film thickness - Binary alloys - Thick films - Magnetism - Platinum alloys - Calculations - Magnetic storage - Manganese alloys;
D O I
10.1103/PhysRevMaterials.5.054406
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The magnetic anisotropy in MgO-capped MnPt films and its voltage control are studied using first-principles calculations. Sharp variation of the magnetic anisotropy with film thickness, especially in the Pt-terminated film, suggests that it may be widely tuned by adjusting the film thickness. In thick films the linear voltage control coefficient is as large as 1.5 and -0.6 pJ/Vm for Pt-terminated and Mn-terminated interfaces, respectively. The combination of a widely tunable magnetic anisotropy energy and a large voltage-control coefficient suggest that MgO-capped MnPt films can serve as a versatile platform for magnetic memory and antiferromagnonic applications.
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页数:6
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