A 50-59 GHz CMOS Injection Locking Power Amplifier

被引：10

作者：

Lin, Jiafu ^{[1
]}

Boon, Chirn Chye ^{[1
]}

Yi, Xiang ^{[1
]}

Feng, Guangyin ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, VIRTUS, Singapore 639798, Singapore

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2015年 / 25卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

CMOS power amplifier (PA); injection locking; low power; power added efficiency (PAE); V-band;

D O I：

10.1109/LMWC.2014.2369960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The buffered input and output can improve the injection locking range and avoid load-to-tank pulling. The measured injection locking range is from 50 GHz to 59 GHz and the peak Power Added Efficiency (PAE) is 16.1% with a maximum output power of 11.39 dBm. Moreover, the die size is merely 260 mu m x 400 mu m excluding pads.

引用

页码：52 / 54

页数：3

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