Peculiarities of the Aharonov-Bohm Effect for Interacting Electrons in Thin Quantum Rings

被引：0

作者：

Bauzha, O. S. ^{[1
]}

Sus, B. B. ^{[2
]}

Gavrilchenko, I. V. ^{[2
]}

Zagorodnyuk, S. P. ^{[1
]}

机构：

[1] Taras Shevchenko Natl Univ Kyiv, Fac Radio Phys Elect & Comp Syst, Kiev, Ukraine

[2] Taras Shevchenko Natl Univ Kyiv, Inst High Technol, Kiev, Ukraine

来源：

2019 IEEE 39TH INTERNATIONAL CONFERENCE ON ELECTRONICS AND NANOTECHNOLOGY (ELNANO) | 2019年

关键词：

Aharonov-Bohm Effect; Quantum Ring; electron-electron interaction; MAGNETIC-PROPERTIES; SPIN-ORBIT;

D O I：

10.1109/elnano.2019.8783421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electronic states of a InSb, InAs and GaN quantum rings with a small number of interacting electrons in magnetic field by the means of the spin-density functional theory were analysed in detail. It has been shown that Aharonov-Bohm effect highly depends on the number of interacting electrons. The results indicate that in the case of two interacting electrons in the InSb, InAs and GaN ring, these oscillations become aperiodic. Quantum rings of different materials have the different Aharonov-Bohm influence in case of two interacting electrons. The Aharonov-Bohm effect in a InSb, InAs and GaN quantum ring can be regulated by changing the number of interacting electrons.

引用

页码：72 / 77

页数：6

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