A simulation model for dielectric relaxation based on defect diffusion model and waiting time problems

被引:1
作者
Eker, Sitki [1 ]
Bozdemir, Sueleyman [2 ]
机构
[1] Univ Ahi Evran, Fac Sci & Letters, Dept Phys, TR-40100 Kirsehir, Turkey
[2] Cukurova Univ, Fac Sci & Letters, Dept Phys, TR-01330 Adana, Turkey
关键词
Diffusion and transport; Modeling and simulation; Monte Carlo simulations; Structure; Defects; ISING-MODEL; LIQUIDS;
D O I
10.1016/j.jnoncrysol.2009.06.044
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We propose a simulation model for dielectric relaxation based on defect diffusion. The defect diffusion model (DDM) has been used to interpret dielectric relaxation and other relaxation phenomena. The essential feature of the model is a cooperative interaction between the relaxing dipole and its nearest-neighbors, containing defects, and the relaxation can only occur when a defect encounters a dipole. In our model we have taken the motion of defect as a stochastic process characterized by successive waiting time problem rather than classical random walk motion. We present computer simulation result for a simple dipolar model system and the dipole correlation function obtained from this new model under various physical conditions appears to be in the form of a stretched exponential function. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:553 / 555
页数:3
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