Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

被引：283

作者：

David, Aurelien ^{[1
]}

Grundmann, Michael J. ^{[1
]}

机构：

[1] Philips Lumileds Lighting Co, San Jose, CA 95131 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 10期

关键词：

LASERS;

D O I：

10.1063/1.3330870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To investigate the variation in internal quantum efficiency in InGaN structures, we measure the differential carrier lifetime of an InGaN/GaN double-heterostructure light-emitting diode under varying electroluminescence injection conditions. By coupling this measurement to an internal quantum efficiency measurement, we determine the carrier density and the radiative and nonradiative contributions to the lifetime without making any assumptions on recombination processes. We find that droop is caused by a shortening of the nonradiative lifetime with current. The observed shortening of both radiative and nonradiative lifetimes with current is found to be in excellent agreement with an ABC model including phase-space filling. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3330870]

引用

页数：3

共 16 条

[1] Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors [J].

Chichibu, Shigefusa F. ;

Uedono, Akira ;

Onuma, Takeyoshi ;

Haskell, Benjamin A. ;

Chakraborty, Arpan ;

Koyama, Takahiro ;

Fini, Paul T. ;

Keller, Stacia ;

Denbaars, Steven P. ;

Speck, James S. ;

Mishra, Umesh K. ;

Nakamura, Shuji ;

Yamaguchi, Shigeo ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Han, Jung ;

Sota, Takayuki .

NATURE MATERIALS, 2006, 5 (10) :810-816

[2]

Chow W.W., 1999, Semiconductor-Laser Fundamentals: Physics of the Gain Materials

[3] Auger recombination rates in nitrides from first principles [J].

Delaney, Kris T. ;

Rinke, Patrick ;

Van de Walle, Chris G. .

APPLIED PHYSICS LETTERS, 2009, 94 (19)

[4] Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2 [J].

Gardner, N. F. ;

Mueller, G. O. ;

Shen, Y. C. ;

Chen, G. ;

Watanabe, S. ;

Gotz, W. ;

Krames, M. R. .

APPLIED PHYSICS LETTERS, 2007, 91 (24)

[5] Electroluminescent measurement of the internal quantum efficiency of light emitting diodes [J].

Getty, Amorette ;

Matioli, Elison ;

Iza, Michael ;

Weisbuch, Claude ;

Speck, James S. .

APPLIED PHYSICS LETTERS, 2009, 94 (18)

[6] Effect of efficiency "droop" in violet and blue InGaN laser diodes [J].

Grzanka, S. ;

Perlin, P. ;

Czernecki, R. ;

Marona, L. ;

Bockowski, M. ;

Lucznik, B. ;

Leszczynski, M. ;

Suski, T. .

APPLIED PHYSICS LETTERS, 2009, 95 (07)

[7] On the importance of radiative and Auger losses in GaN-based quantum wells [J].

Hader, J. ;

Moloney, J. V. ;

Pasenow, B. ;

Koch, S. W. ;

Sabathil, M. ;

Linder, N. ;

Lutgen, S. .

APPLIED PHYSICS LETTERS, 2008, 92 (26)

[8]

Hader J., 2006, Proc. of SPIE, V6115, p61151T

[9] Status and future of high-power light-emitting diodes for solid-state lighting [J].

Krames, Michael R. ;

Shchekin, Oleg B. ;

Mueller-Mach, Regina ;

Mueller, Gerd O. ;

Zhou, Ling ;

Harbers, Gerard ;

Craford, M. George .

JOURNAL OF DISPLAY TECHNOLOGY, 2007, 3 (02) :160-175

[10] Auger losses in GaN-based quantum wells: Microscopic theory [J].