A SiGe HBT BiCMOS technology for mixed signal RF applications

被引：50

作者：

Ahlgren, DC ^{[1
]}

Freeman, G ^{[1
]}

Subbanna, S ^{[1
]}

Groves, R ^{[1
]}

Greenberg, D ^{[1
]}

Malinowski, J ^{[1
]}

Nguyen-Ngoc, D ^{[1
]}

Jeng, SJ ^{[1
]}

Stein, K ^{[1
]}

Schonenberg, K ^{[1
]}

Kiesling, D ^{[1
]}

Martin, B ^{[1
]}

Wu, S ^{[1
]}

Harame, DL ^{[1
]}

Meyerson, B ^{[1
]}

机构：

[1] IBM Corp, Microelect Div, Hopewell Junction, NY 12533 USA

来源：

PROCEEDINGS OF THE 1997 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1997年

关键词：

D O I：

10.1109/BIPOL.1997.647434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results of IBM's Silicon Germanium HBT 0.35 mu m L-eff BiCMOS process with 3 level metal on 200 mm wafers. CMOS devices, as well as resistors, capacitors, inductors and other key passive elements are integrated into a high performance SiGe HBT NPN technology without sacrificing key bipolar characteristics (f(t), f(max)). These results demonstrate the potential of designing analog/mixed signal applications with "system-on-a-chip" functionality.

引用

页码：195 / 197

页数：3

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