Study of charged defects in CdTe and CdHgTe by scanning electron and tunneling microscopy techniques

被引：0

作者：

Panin, GN ^{[1
]}

Diaz-Guerra, C

Piqueras, J

机构：

[1] Russian Acad Sci, Inst Problems Microelect Technol & Highly Pure Ma, Chernogolovka 142432, Russia

[2] Univ Complutense, E-28040 Madrid, Spain

来源：

IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA | 1998年 / 62卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：461 / 466

页数：6

共 19 条

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