A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application

被引：38

作者：

Do, Kyoung-Il ^{[1
]}

Lee, Byung-Seok ^{[1
]}

Koo, Yong-Seo ^{[1
]}

机构：

[1] Dankook Univ, Dept Elect & Elect Engn, Yongin 16890, South Korea

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2019年 / 7卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

SCR; DDSCR; ESD protection device; high holding voltage; low dynamic resistance; on-resistance; current driving capability; LOW TRIGGER VOLTAGE; ESD;

D O I：

10.1109/JEDS.2019.2916399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dual-directional silicon-controlled rectifiers (DDSCRs), which provide both positive and negative electrostatic discharge (ESD) surge paths, are ESD protection devices with an excellent area efficiency. However, DDSCRs have a low holding voltage for use in 5 V-class applications, with a relatively high on-state resistance because of the elongated ESD surge path compared to unidirectional SCRs. In this paper, we propose a novel DDSCR with a higher holding voltage and a better ESD tolerance than conventional low-triggering DDSCRs (LTDDSCRs), realized by operating two additional parasitic bipolar transistors. The proposed ESD protection device was developed through a 0.18-mu m CMOS process, and a timeline pulse system was used to verify its properties. The measurement results show that the proposed ESD protection device exhibits an improved tolerance and a high holding voltage and is expected to be reliable in 5 V-class applications.

引用

页码：601 / 605

页数：5

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