Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures

被引：30

作者：

Hofstetter, Daniel ^{[1
]}

Baumann, Esther ^{[1
]}

Giorgetta, Fabrizio Raphael ^{[1
]}

Theron, Ricardo ^{[1
]}

Wu, Hong ^{[2
]}

Schaff, William J. ^{[2
]}

Dawlaty, Jahan ^{[2
]}

George, Paul A. ^{[2
]}

Eastman, Lester F. ^{[2
]}

Rana, Farhan ^{[2
]}

Kandaswamy, Prem K. ^{[3
]}

Guillot, Fabien ^{[3
]}

Monroy, Eva ^{[3
]}

机构：

[1] Univ Neuchatel, CH-2009 Neuchatel, Switzerland

[2] Cornell Univ, Ithaca, NY 14853 USA

[3] CEA Grenoble, INAC PSC SP2M, Equipe Mixte CEA CNRS Nanophys & Semicond, F-38054 Grenoble 9, France

来源：

PROCEEDINGS OF THE IEEE | 2010年 / 98卷 / 07期

基金：

瑞士国家科学基金会;

关键词：

III-nitrides; intersubband transitions; optical rectification; quantum cascade detectors; quantum wells; GAN/ALN QUANTUM-WELLS; 1.55; MU-M; RAY PHOTOEMISSION SPECTROSCOPY; MOLECULAR-BEAM EPITAXY; VAPOR-PHASE EPITAXY; ROOM-TEMPERATURE; INFRARED DETECTOR; CASCADE LASER; WAVE-GUIDES; ABSORPTION;

D O I：

10.1109/JPROC.2009.2035465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the physics, epitaxial growth, fabrication, and characterization of optoelectronic devices based on intersubband transitions in the AlN/GaN material system. While in 1999, only results of optical absorption experiments could be shown, photodetectors and modulators with operation frequencies beyond 10 GHz as well as optically pumped light emitters have been demonstrated recently. This is the reason for a comprehensive report on the most important properties of such devices. Beside some basic theoretical considerations, we will concentrate on the fabrication and characterization of modulators, switches, photodetectors, and light emitters. At the end of this paper, an outlook to future trends and developments in this emerging field will be given.

引用

页码：1234 / 1248

页数：15

共 56 条

[31] OPTICAL SATURATION OF INTERSUBBAND ABSORPTION IN GAAS-ALXGA1-X AS QUANTUM WELLS [J].