Low-Frequency Noises and DLTS Studies in HgCdTe MWIR Photodiodes

被引：11

作者：

Guinedor, P. ^{[1
,2
]}

Brunner, A. ^{[1
]}

Rubaldo, L. ^{[1
]}

Bauza, D. ^{[2
]}

Reimbold, G. ^{[3
]}

Billon-Lanfrey, D. ^{[1
]}

机构：

[1] SOFRADIR, CS 10021, Actipole,364 Route Valence, F-38113 Veurey Voroize, France

[2] MINATEC INPG, IMEP LAHC, 3 Parvis Louis Neel, F-38016 Grenoble, France

[3] CEA LETI, 17 Ave Martyrs, F-38054 Grenoble, France

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2019年 / 48卷 / 10期

关键词：

HgCdTe; HOT; RTS; 1; f noise; DLTS; dislocation; STATES; DEFECTS;

D O I：

10.1007/s11664-019-07213-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Both low-frequency noises and electrically active defects have been investigated for two technological variants, i.e. optimized and non-optimized, of the HgCdTe p on n technology applied to the mid-wave infrared blue band with a cut-off wavelength of 4.2 mu m. This has been achieved using electro-optical characterizations and the deep level transient spectroscopy (DLTS) technique. The results show that the impact of extra 1/f and random telegraph signal noises has been reduced with the optimization of the technology. Furthermore, a broadened DLTS peak, probably related to dislocations in the material, has been found for both variants, the relative amplitude of which is reduced in the optimized case. The potential correlation between low-frequency noises and this broadened peak is discussed.

引用

页码：6113 / 6117

页数：5

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