Long-term reliability studies of high-power 808 nm tapered diode lasers with stable beam quality

被引：5

作者：

Dittmar, F. ^{[1
]}

Sumpf, B. ^{[1
]}

Erbert, G. ^{[1
]}

Traenkle, G. ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2007年 / 22卷 / 04期

关键词：

D O I：

10.1088/0268-1242/22/4/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Long-term ageing tests of 808 nm tapered diode lasers with tensile-strained GaAsP quantum wells embedded in AlGaAs waveguides are presented. The lasers have been aged over 7200 h at an output power of 2 W in continuous-wave operation. The experiments demonstrate a low degradation rate of 1.3 x 10(-5) h(-1) as well as high stability of the beam quality. The high long-term reliability of operation combined with stable beam quality makes these lasers promising for new industrial applications.

引用

页码：374 / 379

页数：6

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