Te vapor pressure dependence of the pn junction properties of PbTe liquid phase epitaxial layers

被引：7
|
作者：
Nugraha
Tamura, W
Itoh, O
Suto, K
Nishizawa, J
机构：
[1] Bandung Inst Technol, Dept Engn Phys, Bandung 40132, Indonesia
[2] Tohoku Univ, Fac Engn, Dept Mat Sci, Sendai, Miyagi 980, Japan
[3] Semicond Res Inst, Sendai, Miyagi 980, Japan
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 05期
关键词：
liquid phase epitaxy; PbTe; p-n junctions;
D O I：
10.1007/s11664-998-0174-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The pn junction characteristics of the PbTe epitaxial layers grown on PbTe substrates are investigated. Both the substrate crystals and the epitaxial layers are grown under control Te vapor pressures. The ideality factors n of pn junctions decrease close to 1 in the temperature region from 40K to about 120K, but then increase with increasing temperature. The increase of n is more pronounced for higher Te vapor pressure. As a possible origin of the recombination current, deep levels with E-d = 0.09 eV are found from Hall measurements for pn junctions grown under higher Te vapor pressure.
引用
收藏
页码：438 / 441
页数：4
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