Effect of thickness on the microstructural, optoelectronic and morphological properties of electron beam evaporated ZnTe films

被引：29

作者：

Balu, A. R. ^{[3
,4
]}

Nagarethinam, V. S. ^{[3
,4
]}

Thayumanavan, A. ^{[3
,4
]}

Murali, K. R. ^{[1
,2
,4
]}

Sanjeeviraja, C. ^{[1
,2
,4
]}

Jayachandran, M. ^{[1
,2
,4
]}

机构：

[1] Cent Electrochem Res Inst, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, India

[2] CSIR, Electrochem Mat Sci Div, New Delhi, India

[3] AVVM Sri Pushpam Coll, Dept Phys, Thanjavur, India

[4] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 502卷 / 02期

关键词：

II-VI; Semiconductor; Thin films; ZnTe; THIN-FILMS; OPTICAL-PROPERTIES; GLASS; EPITAXY; CDTE; SPECTROSCOPY; DEPENDENCE; INTERLAYER; SILICON; SWITCH;

D O I：

10.1016/j.jallcom.2010.04.191

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnTe films of different thicknesses were deposited on glass substrates at a substrate temperature of 300 degrees C. The thickness of the films varied in the range of 110-320 nm. The films exhibited cubic structure with preferential orientation in the (1 1 1) direction. A very high value of absorption co-efficient (10(4)cm(-1)) is observed. Band gap values in the range between 2.23 and 2.38 eV are observed when the film thickness was varied between 320 and 110 nm, respectively. The refractive index values are found to vary between 2.68 and 2.90 for the films of different thicknesses. It has been observed that the conductivity increases continuously with temperature as well as with thickness. Laser Raman spectra showed the presence of peaks at 206.8 and 411.2 cm(-1) corresponding to the first order and second order LO phonon of monophase ZnTe films. PL analysis confirmed the formation of monophase ZnTe films with nano grains. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：434 / 438

页数：5

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